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wf5027 series seiko npc corporation ? crystal oscillator module ics overview the wf5027 series are miniature crystal oscillator module ics. the oscillator circuit stage has voltage regula- tor drive, signi?antly reducing current consumption and crystal current, compared with existing devices, and signi?antly reducing the oscillator characteristics supply voltage dependency. there are 3 pad layout package options available for optimized mounting, making these devices ideal for miniature crystal oscillators. features wide range of operating supply voltage: 1.60 to 3.63v regulated voltage drive oscillator circuit for reduced power consumption and crystal drive current optimized low crystal drive current oscillation for miniature crystal units 3 pad layout options for mounting 5027a , m , q series: for flip chip bonding 5027b , n , r series: for wire bonding (type i) 5027c , p , s series: for wire bonding (type ii) recommended oscillation frequency range for fundamental oscillator low frequency version: 20mhz to 60mhz high frequency version: 60mhz to 100mhz for 3rd overtone oscillator low frequency version: 40mhz to 110mhz high frequency version *1 : 110mhz to 180mhz *1: under development multi-stage frequency divider for low-frequency output support: 0.9mhz (min) frequency divider built-in (for fundamental oscil- lator) selectable by version: f o , f o /2, f o /4, f o /8, f o /16, f o /32, f o /64 ? 40 to 85 c operating temperature range standby function high impedance in standby mode, oscillator stops cmos output duty level (1/2vdd) 50 ?5% output duty 15pf output drive capability wafer form (wf5027 ) chip form (cf5027 ) applications 3.2 2.5, 2.5 2.0, 2.0 1.6 size miniature crystal oscillator modules ordering information device package wf5027 ? wafer form cf5027 ? chip form
wf5027 series seiko npc corporation ? series configuration for fundamental oscillator for 3rd overtone oscillator version name operating supply voltage range [v] output drive capability [ma] pad layout recommended oscillation frequency range *1 [mhz] *1. the recommended oscillation frequency is a yardstick value derived from the crystal used for npc characteristics authentica tion. however, the oscilla- tion frequency range is not guaranteed. speci?ally, the characteristics can vary greatly due to crystal characteristics and mo unting conditions, so the oscillation characteristics of components must be carefully evaluated. version *2 *2. wafer form devices have designation wf5027 and chip form devices have designation cf5027 . f o output f o /2 output f o /4 output f o /8 output f o /16 output f o /32 output f o /64 output 1.60 to 3.63 4 flip chip bonding 20 to 60 5027a1 5027a2 5027a3 5027a4 5027a5 5027a6 5027a7 60 to 100 5027ap 5027aq 5027ar 5027as 5027at 5027av 5027aw wire bonding type i 20 to 60 5027b1 5027b2 5027b3 5027b4 5027b5 5027b6 5027b7 60 to 100 5027bp 5027bq 5027br 5027bs 5027bt 5027bv 5027bw wire bonding type ii 20 to 60 5027c1 5027c2 5027c3 5027c4 5027c5 5027c6 5027c7 60 to 100 5027cp 5027cq 5027cr 5027cs 5027ct 5027cv 5027cw operating supply voltage range [v] output drive capability [ma] pad layout recommended oscillation frequency range *1 [mhz] and version *2 *1. the recommended oscillation frequency is a yardstick value derived from the crystal used for npc characteristics authentica tion. however, the oscilla- tion frequency range is not guaranteed. speci?ally, the characteristics can vary greatly due to crystal characteristics and mo unting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. wafer form devices have designation wf5027 and chip form devices have designation cf5027 . versions in parentheses ( ) are under development. 40 to 50 50 to 65 65 to 85 85 to 110 110 to 145 145 to 180 1.60 to 3.63 8 flip chip bonding 5027ma 5027mb 5027mc 5027md (5027qe) (5027qf) wire bonding type i 5027na 5027nb 5027nc 5027nd (5027re) (5027rf) wire bonding type ii 5027pa 5027pb 5027pc 5027pd (5027se) (5027sf) device package version name wf5027 ? wafer form cf5027 ? chip form wf5027 ? 4 oscillation frequency range, frequency divider function pad layout type form a, m, q: for flip chip bonding b, n, r: for wire bonding (type i) c, p, s: for wire bonding (type ii) wf: wafer form cf: chip (die) form
wf5027 series seiko npc corporation ? pad layout (unit: m) pad dimensions pin description block diagram 5027a , m , q (for flip chip bonding) 5027b , n , r (for wire bonding (type i)) 5027c , p , s (for wire bonding (type ii)) chip size: 0.75 0.69mm chip thickness: 130 ?15? pad size: 90? chip base: v ss level chip size: 0.75 0.69mm chip thickness: 130 ?15? pad size: 90? chip base: v ss level chip size: 0.75 0.69mm chip thickness: 130 ?15? pad size: 90? chip base: v ss level pad no. pad dimensions [m] pad no. pin name description xy 5027a 5027m 5027q 5027b 5027n 5027r 5027c 5027p 5027s 1 229 114 1 2 1 xt ampli?r input crystal connection pins. crystal is connected between xt and xtn. 2 520 114 2 1 2 xtn ampli?r output 3 636 304 3 6 5 vdd (+) supply voltage 4 636 531 4 5 4 q output output frequency determined by internal circuit to one of f o , f o /2, f o /4, f o /8, f o /16, f o /32, f o /64 5 114 531 5 4 3 vss (? ground 6 114 304 6 3 6 inhn output state control input high impedance when low (oscillator stops). power-saving pull-up resistor built-in. q vdd xtn vss (0,0) (750,690) x y inhn xt 12 3 4 6 5 vss inhn xt q (0,0) (750,690) x y vdd xtn 12 3 4 6 5 q vss xtn vdd (0,0) (750,690) x y inhn xt 12 3 4 6 5 xt inhn xtn q cmos r d c g vss vdd c d r f vrg divider
wf5027 series seiko npc corporation ? version discrimination internal components the wf5027 series device version is not determined solely by the mask pattern, but can also be determined by the trimming of internal trimming fuses. version determined by laser trimming: these chips are produced from a common device by the laser trimming of fuses corresponding to the ordered version, shown in table 1. these devices are shipped for electrical characteristics testing. laser-trimmed ver- sions are identi ed externally by the combination of the version name marking (1) and the locations of trimmed fuses (2). version determined by mask pattern: these chips are fabricated using the mask corresponding to the ordered version, and do not require trimming. mask-fabricated versions are identi ed externally by the version name marking (1) only. since the wf5027 series devices are manufactured using 2 methods, there are 2 types of ic chip available (identi ed externally) for the same version name. the identi cation markings for all wf5027 series device versions is shown in table 2. (750,690) npc f1 f2 f3 f4 f5 f6 f7 f8 f9 5027 (2) trimming fuses (1) version code on die
wf5027 series seiko npc corporation ? table 1. version and trimming fuses (for fundamental oscillator) version trimming fuse number *1 *1. ? untrimmed, : trimmed, f6 to f9 not used f1 f2 f3 f4 f5 5027 1 5027 2 5027 3 5027 4 5027 5 5027 6 5027 7 5027 p 5027 q 5027 r 5027 s 5027 t 5027 v 5027 w 5027 1 trimming fuses (untrimmed) 5027 2 trimming fuses (f1 link trimmed) 5027 3 trimming fuses (f2 link trimmed) 5027 4 trimming fuses (f1 and f2 links trimmed) : trimmed device table 2. version and trimming fuses (for 3rd overtone oscillator) version recommended oscillation frequency range *1 [mhz] trimming fuse number *2 f1 f2 f3 f4 f5 f6 f7 f8 f9 5027 a 40 to 50 5027 b 50 to 65 5027 c 65 to 85 5027 d 85 to 110 5027 e (110 to 145) tbd 5027 f (145 to 180) *1. values in parentheses ( ) are provisional only. *2. ? untrimmed, : trimmed
wf5027 series seiko npc corporation ? table 3. version identi?ation by version name and chip markings (for fundamental oscillator) version name version set by trimming fuses version set by mask pattern version code on chip trimming fuses *1 *1. ? : untrimmed, : trimmed version code on chip trimming fuses f1 f2 f3 f4 f5 f6 f7 f8 f9 f1 to f9 5027a1 ax ????? untrimmed ax untrimmed 5027a2 ax ???? a2 5027a3 ax ???? a3 5027a4 ax ??? a4 5027a5 ax ???? a5 5027a6 ax ??? a6 5027a7 ax ??? a7 5027ap ax ??? ap 5027aq ax ?? aq 5027ar ax ?? ar 5027as ax ? as 5027at ax ?? at 5027av ax ? av 5027aw ax ? aw 5027b1 bx ????? bx 5027b2 bx ???? b2 5027b3 bx ???? b3 5027b4 bx ??? b4 5027b5 bx ???? b5 5027b6 bx ??? b6 5027b7 bx ??? b7 5027bp bx ??? bp 5027bq bx ?? bq 5027br bx ?? br 5027bs bx ? bs 5027bt bx ?? bt 5027bv bx ? bv 5027bw bx ? bw 5027c1 cx ????? cx 5027c2 cx ???? c2 5027c3 cx ???? c3 5027c4 cx ??? c4 5027c5 cx ???? c5 5027c6 cx ??? c6 5027c7 cx ??? c7 5027cp cx ??? cp 5027cq cx ?? cq 5027cr cx ?? cr 5027cs cx ? cs 5027ct cx ?? ct 5027cv cx ? cv 5027cw cx ? cw
wf5027 series seiko npc corporation ? table 4. version identi?ation by version name and chip markings (for 3rd overtone oscillator) version name version set by trimming fuses version set by mask pattern version code on chip trimming fuses *1 *1. ? : untrimmed, : trimmed version code on chip trimming fuses f1 f2 f3 f4 f5 f6 f7 f8 f9 f1 to f9 5027ma mx ?????? ma untrimmed 5027mb mx ?????? mb 5027mc mx ???? mc 5027md mx ??? md 5027na nx ?????? na 5027nb nx ?????? nb 5027nc nx ???? nc 5027nd nx ??? nd 5027pa px ?????? pa 5027pb px ?????? pb 5027pc px ???? pc 5027pd px ??? pd (5027qe) tbd (5027qf) (5027re) (5027rf) (5027se) (5027sf)
wf5027 series seiko npc corporation ? specifications absolute maximum ratings v ss = 0v recommended operating conditions for fundamental oscillator v ss = 0v for 3rd overtone oscillator v ss = 0v parameter symbol condition rating unit supply voltage range v dd between vdd and vss ? 0.5 to +4.0 v input voltage range v in input pins ? 0.5 to v dd + 0.5 v output voltage range v out output pins ? 0.5 to v dd + 0.5 v storage temperature range t stg wafer form ? 65 to +150 c output current i out q pin 20 ma parameter symbol condition rating unit min typ max operating supply voltage v dd cl 15pf 1.60 3.63 v input voltage v in input pins v ss ? dd v operating temperature t opr ? 40 +85 c oscillation frequency *1 *1. the oscillation frequency is a yardstick value derived from the crystal used for npc characteristics authentication. howeve r, the oscillation frequency range is not guaranteed. speci?ally, the characteristics can vary greatly due to crystal characteristics and mounting conditio ns, so the oscillation characteristics of components must be carefully evaluated. f o 5027 1 to 5027 7 20?0mhz 5027 p to 5027 w 60 100 mhz output frequency f out cl 15pf 5027 1 to 5027 7 0.9 60 mhz 5027 p to 5027 w 0.9 100 mhz parameter symbol condition rating unit min typ max operating supply voltage v dd cl 15pf 1.60 3.63 v input voltage v in input pins v ss ? dd v operating temperature t opr ? 40 +85 c oscillation frequency *1 *1. the oscillation frequency is a yardstick value derived from the crystal used for npc characteristics authentication. howeve r, the oscillation frequency range is not guaranteed. speci?ally, the characteristics can vary greatly due to crystal characteristics and mounting conditio ns, so the oscillation characteristics of components must be carefully evaluated. f o 5027 a 40?0mhz 5027 b 50?5mhz 5027 c 65?5mhz 5027 d 85 110 mhz
wf5027 series seiko npc corporation ? electrical characteristics dc characteristics for fundamental oscillator: low frequency version (5027 1 to 5027 7) v dd = 1.60 to 3.63v, v ss = 0v, ta = ? 40 to +85 c unless otherwise noted. parameter symbol condition rating unit min typ max high-level output voltage v oh q: measurement cct 3, i oh = ?4ma v dd ?0.4 v low-level output voltage v ol q: measurement cct 3, i ol = 4ma 0.4 v high-level input voltage v ih inhn, measurement cct 4 0.7v dd v low-level input voltage v il inhn, measurement cct 4 0.3v dd v output leakage current i z q: measurement cct 5, inhn = low v oh = v dd 10 ? v ol = v ss ?10 ? current consumption *1 *1. the consumption current i dd (c l ) with a load capacitance (c l ) connected to the q pin is given by the following equation, where i dd is the no-load con- sumption current and f out is the output frequency. i dd (c l ) [ma] = i dd [ma] + c l [pf] v dd [v] f out [mhz] 10 ? i dd 5027 1 (f o ), measurement cct 1, no load, inhn = open, f o = 48mhz, f out = 48mhz v dd = 3.3v 1.6 2.4 ma v dd = 2.5v 1.3 2.0 ma v dd = 1.8v 1.0 1.5 ma 5027 2 (f o /2), measurement cct 1, no load, inhn = open, f o = 48mhz, f out = 24mhz v dd = 3.3v 1.5 2.3 ma v dd = 2.5v 1.2 1.8 ma v dd = 1.8v 0.9 1.4 ma 5027 3 (f o /4), measurement cct 1, no load, inhn = open, f o = 48mhz, f out = 12mhz v dd = 3.3v 1.3 2.0 ma v dd = 2.5v 1.0 1.5 ma v dd = 1.8v 0.8 1.2 ma 5027 4 (f o /8), measurement cct 1, no load, inhn = open, f o = 48mhz, f out = 6mhz v dd = 3.3v 1.1 1.7 ma v dd = 2.5v 0.9 1.4 ma v dd = 1.8v 0.75 1.15 ma 5027 5 (f o /16), measurement cct 1, no load, inhn = open, f o = 48mhz, f out = 3mhz v dd = 3.3v 1.05 1.6 ma v dd = 2.5v 0.85 1.3 ma v dd = 1.8v 0.7 1.1 ma 5027 6 (f o /32), measurement cct 1, no load, inhn = open, f o = 48mhz, f out = 1.5mhz v dd = 3.3v 1.0 1.5 ma v dd = 2.5v 0.85 1.3 ma v dd = 1.8v 0.7 1.1 ma 5027 7 (f o /64), measurement cct 1, no load, inhn = open, f o = 60mhz, f out = 0.94mhz v dd = 3.3v 1.0 1.5 ma v dd = 2.5v 0.85 1.3 ma v dd = 1.8v 0.7 1.1 ma standby current i st measurement cct 1, inhn = low 10 a inhn pull-up resistance r up1 measurement cct 6 0.4 1.5 8 m ? r up2 30 70 150 k ? oscillator feedback resistance r f 50 100 200 k ? oscillator capacitance c g design value (a monitor pattern on a wafer is tested), excluding parasitic capacitance. 4.8 6 7.2 pf c d 81012pf
wf5027 series seiko npc corporation ?0 for fundamental oscillator: high frequency version (5027 p to 5027 w) v dd = 1.60 to 3.63v, v ss = 0v, ta = ? 40 to +85 c unless otherwise noted. parameter symbol condition rating unit min typ max high-level output voltage v oh q: measurement cct 3, i oh = ?4ma v dd ?0.4 v low-level output voltage v ol q: measurement cct 3, i ol = 4ma 0.4 v high-level input voltage v ih inhn, measurement cct 4 0.7v dd v low-level input voltage v il inhn, measurement cct 4 0.3v dd v output leakage current i z q: measurement cct 5, inhn = low v oh = v dd 10 ? v ol = v ss ?10 ? current consumption *1 *1. the consumption current i dd (c l ) with a load capacitance (c l ) connected to the q pin is given by the following equation, where i dd is the no-load con- sumption current and f out is the output frequency. i dd (c l ) [ma] = i dd [ma] + c l [pf] v dd [v] f out [mhz] 10 ? i dd 5027 p (f o ), measurement cct 1, no load, inhn = open, f o = 80mhz, f out = 80mhz v dd = 3.3v 2.5 3.8 ma v dd = 2.5v 2.0 3.0 ma v dd = 1.8v 1.6 2.4 ma 5027 q (f o /2), measurement cct 1, no load, inhn = open, f o = 80mhz, f out = 40mhz v dd = 3.3v 2.4 3.6 ma v dd = 2.5v 1.9 2.9 ma v dd = 1.8v 1.5 2.3 ma 5027 r (f o /4), measurement cct 1, no load, inhn = open, f o = 80mhz, f out = 20mhz v dd = 3.3v 1.8 2.7 ma v dd = 2.5v 1.5 2.3 ma v dd = 1.8v 1.2 1.6 ma 5027 s (f o /8), measurement cct 1, no load, inhn = open, f o = 80mhz, f out = 10mhz v dd = 3.3v 1.7 2.6 ma v dd = 2.5v 1.4 2.1 ma v dd = 1.8v 1.1 1.7 ma 5027 t (f o /16), measurement cct 1, no load, inhn = open, f o = 80mhz, f out = 5mhz v dd = 3.3v 1.6 2.4 ma v dd = 2.5v 1.3 2.0 ma v dd = 1.8v 1.0 1.5 ma 5027 v (f o /32), measurement cct 1, no load, inhn = open, f o = 80mhz, f out = 2.5mhz v dd = 3.3v 1.5 2.3 ma v dd = 2.5v 1.2 1.8 ma v dd = 1.8v 1.0 1.5 ma 5027 w (f o /64), measurement cct 1, no load, inhn = open, f o = 80mhz, f out = 1.25mhz v dd = 3.3v 1.5 2.3 ma v dd = 2.5v 1.2 1.8 ma v dd = 1.8v 1.0 1.5 ma standby current i st measurement cct 1, inhn = low 10 a inhn pull-up resistance r up1 measurement cct 6 0.4 1.5 8 m ? r up2 30 70 150 k ? oscillator feedback resistance r f 50 100 200 k ? oscillator capacitance c g design value (a monitor pattern on a wafer is tested), excluding parasitic capacitance. 1.6 2 2.4 pf c d 3.2 4 4.8 pf
wf5027 series seiko npc corporation ?1 for 3rd overtone oscillator (5027 a to 5027 d) v dd = 1.60 to 3.63v, v ss = 0v, ta = ? 40 to +85 c unless otherwise noted. parameter symbol condition rating unit min typ max high-level output voltage v oh q: measurement cct 3, i oh = ?8ma, v dd = 2.25 to 3.63v v dd ?0.4 v q: measurement cct 3, i oh = ?4ma, v dd = 1.60 to 2.25v v dd ?0.4 v low-level output voltage v ol q: measurement cct 3, i ol = 8ma, v dd = 2.25 to 3.63v 0.4 v q: measurement cct 3, i ol = 4ma, v dd = 1.60 to 2.25v 0.4 v high-level input voltage v ih inhn, measurement cct 4 0.7v dd v low-level input voltage v il inhn, measurement cct 4 0.3v dd v output leakage current i z q: measurement cct 5, inhn = low v oh = v dd 10 ? v ol = v ss ?10 ? current consumption *1 *1. the consumption current i dd (c l ) with a load capacitance (c l ) connected to the q pin is given by the following equation, where i dd is the no-load con- sumption current and f out is the output frequency. i dd (c l ) [ma] = i dd [ma] + c l [pf] v dd [v] f out [mhz] 10 ? i dd 5027 a, measurement cct 1, no load, inhn = open, f o = 48mhz v dd = 3.3v 3.6 5.4 ma v dd = 2.5v 3.0 4.5 ma v dd = 1.8v 2.6 3.9 ma 5027 b, measurement cct 1, no load, inhn = open, f o = 54mhz v dd = 3.3v 3.8 5.7 ma v dd = 2.5v 3.2 4.8 ma v dd = 1.8v 2.8 4.2 ma 5027 c, measurement cct 1, no load, inhn = open, f o = 85mhz v dd = 3.3v 4.8 7.2 ma v dd = 2.5v 4.0 6.0 ma v dd = 1.8v 3.4 5.1 ma 5027 d, measurement cct 1, no load, inhn = open, f o = 100mhz v dd = 3.3v 5.3 8.0 ma v dd = 2.5v 4.4 6.6 ma v dd = 1.8v 3.6 5.4 ma standby current i st measurement cct 1, inhn = low 10 a inhn pull-up resistance r up1 measurement cct 6 0.4 1.5 8 m ? r up2 30 70 150 k ? oscillator feedback resistance r f 5027 a 2.6 3.8 5.0 k ? 5027 b 2.2 3.2 4.2 k ? 5027 c 1.9 2.8 3.7 k ? 5027 d 1.9 2.8 3.7 k ? oscillator capacitance c g design value (a monitor pattern on a wafer is tested), excluding parasitic capacitance. 5027 a 9.6 12 14.4 pf 5027 b 6.4 8 9.6 pf 5027 c 4.8 6 7.2 pf 5027 d 1.6 2 2.4 pf c d design value (a monitor pattern on a wafer is tested), excluding parasitic capacitance. 5027 a 9.6 12 14.4 pf 5027 b 9.6 12 14.4 pf 5027 c 6.4 8 9.6 pf 5027 d 4.8 6 7.2 pf
wf5027 series seiko npc corporation ?2 ac characteristics for fundamental oscillator (5027 1 to 5027 7, 5027 p to 5027 w) v dd = 1.60 to 3.63v, v ss = 0v, ta = ? 40 to +85 c unless otherwise noted. for 3rd overtone oscillator (5027 a to 5027 d) v dd = 1.60 to 3.63v, v ss = 0v, ta = ? 40 to +85 c unless otherwise noted. timing chart parameter symbol condition rating unit min typ max output rise time t r1 measurement cct 1, c l = 15pf, 0.1v dd to 0.9v dd v dd = 2.25 to 3.36v 2.0 4.5 ns t r2 v dd = 1.60 to 2.25v 3.0 5.0 ns output fall time t f1 measurement cct 1, c l = 15pf, 0.9v dd to 0.1v dd v dd = 2.25 to 3.36v 2.0 4.5 ns t f2 v dd = 1.60 to 2.25v 3.0 5.0 ns output duty cycle duty measurement cct 1, ta = 25 c, c l = 15pf 45 50 55 % output disable delay time t od measurement cct 2, ta = 25 c, c l 15pf 50 s parameter symbol condition rating unit min typ max output rise time t r1 measurement cct 1, c l = 15pf, 0.1v dd to 0.9v dd v dd = 2.25 to 3.36v 1.2 3.0 ns t r2 v dd = 1.60 to 2.25v 1.6 4.0 ns output fall time t f1 measurement cct 1, c l = 15pf, 0.9v dd to 0.1v dd v dd = 2.25 to 3.36v 1.2 3.0 ns t f2 v dd = 1.60 to 2.25v 1.6 4.0 ns output duty cycle duty measurement cct 1, ta = 25 c, c l = 15pf 45 50 55 % output disable delay time t od measurement cct 2, ta = 25 c, c l 15pf 50 s figure 1. output switching waveform when inhn goes high to low, the q output goes high once and then becomes high impedance. when inhn goes low to high, the q output goes from high impedance to normal output operation when the oscillation starts (oscil lation is detected). *) the high-impedance interval in the ?ure is shown as a low level due to the 1k ? pull-down resistor connected to the q pin (see "measurement circuit 2" in the "measurement circuits" section). figure 2. output disable and oscillation start timing chart 0.9v dd q duty measurement voltage (0.5v dd ) t w t r t f t 0.1v dd 0.9v dd 0.1v dd duty= t w / t 100 (%) q inhn t od t str v ih v il 0.1v hi-z* normal operation normal operation output stopped
wf5027 series seiko npc corporation ?3 functional description standby function when inhn goes low, the q output becomes high impedance. power-saving pull-up resistor the inhn pin pull-up resistance r up1 or r up2 changes in response to the input level (high or low). when inhn is tied low level, the pull-up resistance is large (r up1 ), reducing the current consumed by the resis- tance. when inhn is left open circuit, the pull-up resistance is small (r up2 ), which increases the input suscep- tibility to external noise. however, the pull-up resistance ties the inhn pin high level to prevent external noise from unexpectedly stopping the output. oscillation detector function the wf5027 series also feature an oscillation detector circuit. this circuit functions to disable the outputs until the oscillator circuit starts and oscillation becomes stable. this alleviates the danger of abnormal oscillator out- put at oscillator start-up when power is applied or when inhn is switched. inhn q oscillator high (or open) frequency output normal operation low high impedance stopped
wf5027 series seiko npc corporation ?4 measurement circuits measurement cct 1 measurement parameter: i dd , i st , duty, t r , t f note: the ac characteristics are observed using an oscilloscope on pin q. measurement cct 2 measurement parameter: t od xtn input signal: 1vp-p, sine wave c1: 0.001 fc l : 15pf r1: 50 ? r l : 1k ? measurement cct 3 measurement parameter: v oh , v ol xtn input signal: 1vp-p, sine wave vdd vss xt q x'tal xtn inhn i dd i st a (including probe capacitance) c l = 15pf i dd : open i st : short 0.1 f i dd : open vdd vss q xtn inhn signal generator r1 c1 v dd or v ss r l c l 0.1 f vdd vss q xtn signal generator 50 ? 0.001 f v oh v ol v 50 ? 0.1 fv s ? v v oh v s ? v v ol v s 0.1 f v s adjusted such that ? v = 50 i oh . v s adjusted such that ? v = 50 i ol . measurement cct 4 measurement parameter: v ih , v il v ih : voltage in v ss to v dd transition that changes the output state. v il : voltage in v dd to v ss transition that changes the output state. inhn has an oscillation stop function. measurement cct 5 measurement parameter: i z measurement cct 6 measurement parameter: r up1 , r up2 vdd vss xt q x'tal xtn inhn v ih v il v 0.1 f vdd vss q inhn i z a v dd or v ss 0.1 f vdd vss inhn v in v a i up v dd i up (v in = 0v) r up2 = i up v dd 0.7v dd r up1 = (v in = 0.7v dd ) 0.1 f
wf5027 series seiko npc corporation ?5 typical performance (for fundamental oscillator) the following characteristics measured using the crystal below. note that the characteristics will vary with the crystal used. crystal used for measurement crystal parameters current consumption negative resistance parameter f o = 48mhz f o = 80mhz c0 [pf] 1.6 2.1 r1 [ ? ]12 10 l1 c0 r1 c1 5027a1, f out = 48mhz, ta = 25 c 1.5 2 2.5 v dd [v] 3 3.5 4 0 2 4 6 8 10 current consumption [ma] c l = 0pf c l = 15pf 5027ap, f out = 80mhz, ta = 25 c 1.5 2 2.5 v dd [v] 3 3.5 4 0 2 4 6 8 10 current consumption [ma] c l = 0pf c l = 15pf 5027 1 to 7, v dd = 3.3v, ta = 25 c 30 20 10 40 50 60 frequency [mhz] 0 ?00 ?00 ?00 ?00 ?000 negative resistance [ ? ] c0 = 0pf c0 = 1pf c0 = 2pf 5027 p to w, v dd = 3.3v, ta = 25 c 70 60 50 80 90 100 frequency [mhz] 0 200 400 600 800 1000 negative resistance [ ? ] c0 = 0pf c0 = 1pf c0 = 2pf characteristics are measured with a capacitance c0, representing the crystal equivalent circuit c0 capacitance, connected betwe en the xt and xtn pins. measurements are performed with agilent 4396b using the npc test jig. characteristics may vary with measuremen t jig and measurement conditions.
wf5027 series seiko npc corporation ?6 frequency deviation by supply voltage change drive level phase noise measurement equipment: agilent e5052 signal source analyzer 5027 1 to 7, f out = 48mhz, 3.3v standard, ta = 25 c 2.1 1.6 v dd [v] 2.6 3.1 3.6 1 0.5 0 0.5 1 ? f/f [ppm] 5027 p to w, f out = 80mhz, 3.3v standard, ta = 25 c 2.1 1.6 v dd [v] 2.6 3.1 3.6 1 0.5 0 0.5 1 ? f/f [ppm] 5027 1 to 7, f out = 48mhz, ta = 25 c 1.5 2 2.5 v dd [v] 3 3.5 4 0 10 20 30 40 50 drive level [ w] 5027 p to w, f out = 80mhz, ta = 25 c 1.5 2 2.5 v dd [v] 3 3.5 4 0 10 20 30 40 50 drive level [ w] 5027a1, v dd = 3.3v, f osc = f out = 48mhz, ta = 25 c 10,000 100,000 1,000,000 10,000,00 0 1,000 100 10 offset frequency [hz] 160 140 120 100 80 60 40 phase noise [dbc/hz] 5027ap, v dd = 3.3v, f osc = f out = 80mhz, ta = 25 c 10,000 100,000 1,000,000 10,000,00 0 1,000 100 10 offset frequency [hz] 160 140 120 100 80 60 40 phase noise [dbc/hz]
wf5027 series seiko npc corporation ?7 output waveform measurement equipment: agilent 54855a oscilloscope 5027a1, v dd = 3.3v, f out = 48mhz, c l = 15pf, ta = 25 c 5027ap, v dd = 3.3v, f out = 80mhz, c l = 15pf, ta = 25 c
wf5027 series seiko npc corporation ?8 typical performance (for 3rd overtone oscillator) the following characteristics measured using the crystal below. note that the characteristics will vary with the crystal used. crystal used for measurement crystal parameters current consumption negative resistance parameter f o = 85mhz f o = 100mhz c0 [pf] 0.9 1.2 r1 [ ? ]56 45 l1 c0 r1 c1 5027 d, f out = 85mhz, ta = 25 c 0 2 4 6 8 10 12 current consumption [ma] 1.6 2.2 2.8 v dd [v] 3.4 4 c l = 0pf c l = 15pf 5027ap, f out = 100mhz, ta = 25 c 0 2 4 6 8 10 12 current consumption [ma] 1.6 2.2 2.8 v dd [v] 3.4 4 c l = 0pf c l = 15pf 5027 d, ta = 25 c, recommended operating frequency range: 85mhz to 110mhz characteristics are measured with a capacitance c0, representing the crystal equivalent circuit c0 capacitance, connected betwe en the xt and xtn pins. measurements are performed with agilent 4396b using the npc test jig. characteristics may vary with measuremen t jig and measurement conditions. frequency [mhz] 0 40 80 120 160 200 0 200 400 600 800 1000 negative resistance [ ? ] 1.8v 2.5v 3.3v 1.8v 2.5v 3.3v 1.8v 2.5v 3.3v 1.8v 2.5v 3.3v c0 = 2pf c0 = 1pf c0 = 0pf
wf5027 series seiko npc corporation 19 frequency deviation by supply voltage change drive level phase noise measurement equipment: agilent e5052 signal source analyzer 5027 d, f out = 85mhz, 3.3v standard, ta = 25 c 1 0.5 0 0.5 1 ? f/f [ppm] 2.1 1.6 v dd [v] 2.6 3.1 3.6 5027 d, f out = 100mhz, 3.3v standard, ta = 25 c 1 0.5 0 0.5 1 ? f/f [ppm] 2.1 1.6 v dd [v] 2.6 3.1 3.6 5027 d, f out = 85mhz, ta = 25 c 0 50 100 150 200 drive level [ w] 1.5 2 2.5 v dd [v] 3 3.5 4 5027 d, f out = 100mhz, ta = 25 c 0 50 100 150 200 drive level [ w] 1.5 2 2.5 v dd [v] 3 3.5 4 5027 d, v dd = 3.3v, f osc = f out = 85mhz, ta = 25 c 160 140 120 100 80 60 40 phase noise [dbc/hz] 10,000 100,000 1,000,000 10,000,00 0 1,000 100 10 offset frequency [hz] 5027 d, v dd = 3.3v, f osc = f out = 100mhz, ta = 25 c 160 140 120 100 80 60 40 phase noise [dbc/hz] 10,000 100,000 1,000,000 10,000,00 0 1,000 100 10 offset frequency [hz]
wf5027 series seiko npc corporation 20 output waveform measurement equipment: agilent 54855a oscilloscope 5027 d, v dd = 3.3v, f out = 85mhz, c l = 15pf, ta = 25 c 5027 d, v dd = 3.3v, f out = 100mhz, c l = 15pf, ta = 25 c
wf5027 series seiko npc corporation 21 nc0505ce 2007.03 please pay your attention to the following points at time of using the products shown in this document. the products shown in this document (hereinafter ?roducts? are not intended to be used for the apparatus that exerts harmful in?ence on human lives due to the defects, failure or malfunction of the products. customers are requested to obtain prior written agreeme nt for such use from seiko npc corporation (hereinafter ?pc?. customers shall be solely responsible for, and indemnify and hold npc free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. npc reserves the right to change the speci?ations of the products in order to improve the characteristic or reliability thereof. npc makes no claim o r warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. therefore, npc shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in t his document. any descriptions including applications, circuits, and the parameters of the products in this document are for reference to use the products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further te sting or modi?ation. customers are requested not to export or re-export, directly or indirectly, the products to any country or any ent ity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. customers are req uested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. seiko npc corporation 15-6, nihombashi-kabutocho, chuo-ku, tokyo 103-0026, japan telephone: +81-3-6667-6601 facsimile: +81-3-6667-6611 http://www.npc.co.jp/ email: sales @ npc.co.jp

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